Performance Analysis of Double Hetero-gate Tunnel Field Effect Transistor
نویسندگان
چکیده
A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulation is done using TCAD tools.
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